Vol. 39 No. 4

General Papers

• Growth of High Quality GaAs by MBE

  Naresh Chand

  335-352

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• Ion Implantation into GaAs

  B. L. Sharma

  353-365

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• Indium Arsenide Solid Solutions: Devices Based on InGaAs(P)

  S. I. Radautsan, V. K. Chumak

  387-396

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• Strained InGaAs/InAiAS High Eledron Mobility Transistors

  Pallab Bhattacharya

  397-410

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• Custom-Designed HI-V Semiconductor Mimstmctures Wed to the Ultimate Physical Limit : U I ~ - L a y e r GaAs/AUs ~uperhtticesa nd Delta- (Monolayer) Doping in GaAs/Al,Ga,-As Structures

  K. Plog, R. Muralidharan

  367-386

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• Phonons in Semiconductor Superlattices

  A. K. Sood

  411-423

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• InP based Devices

  D. N. Bose

  425-434

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