InP based Devices

D. N. Bose

doi:10.14429/dsj.39.4790

D. N. Bose Indian Institute of Technology Kharagpur, Kharagpur

DOI: https://doi.org/10.14429/dsj.39.4790

Keywords: Optoelectronic devices, Crystal growth

Abstract

The frontiers of solid-state devices and integrated circuits are moving towards higher frequencies, output powers and efficiencies. There is also increasing emphasis on the development of optoelectronic devices. In this endeavour InP-based devices are playing a major role. These devices include TEDs, IMPATTS, MISFETs on the one hand and LED, lasers, solarcells and photodetectors on the other. The latest on the scene are devices based on'heterostructures and two-dimensional transport such as HBTsand HEMTs. This review highlights salient differences between InP andGaAs commencing with crystal growth, defect and surface properties and discusses some recent results on MISFETS, radiation-resistant solar cells,HEMTs and HBTs. The relations between physical properties and device performance as applicable to InP and GaAs are clearly brought out.

Author Biography

D. N. Bose, Indian Institute of Technology Kharagpur, Kharagpur

Materials Science Centre, Indian Institute of Technology, Kharagpur- 72 1 302

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