Ion Implantation into GaAs

B. L. Sharma

doi:10.14429/dsj.39.4785

B. L. Sharma Solid State Physics Laboratory, Delhi-1 10 007

DOI: https://doi.org/10.14429/dsj.39.4785

Keywords: GaAs integrated circuits

Abstract

Ion implantation is the most widely used process in semiconductor industry for selectively introducing controlled amount of impurities inGaAs. Various implantation effects which influence the performance and reproducibility of direct implantation GaAs integrated circuits and methods used to overcome/minimize them are discussed in this review. Abrief account of the implantation work being carried out in our laboratory towards fabrication of GaAs MESFETs and improving their performance and uniformity is also included here.

References

Sharma, B.L., Dlflusion and Defect Data, 51-52 (1987), 1-107.

Morgan, D.V., Eisen, F.H. & Ezis, A., IEE Proc., 128, Pt. 1 (1981), 109-130.

Stolte, C.A., Semiconductors and Semimetals, Vol. 20, R.K. Willardson & A.C. Beer, (Eds.), (Academic Press, New York), 1984, pp. 89-158.

Eisen, F.H., Ion Implantation and Beam Processing, J.S. Williams & J.M. Poate, (Eds.), (Academic Press, New York), 1984, pp. 327-355.

Thomas, RN., Hobgood, H.M.,E ldridge, G.W., Barrett, D.L., Braggins, T.T., Ta, L.B. & Wang, S.K., Semiconductors and Semimetals, Vol. 20, R.K. Willardson & A.C. Beer, (Eds.), (Academic Press, New York), 1984, pp. 1-87.

DiLorenzo, J.V. & Khandelwal, D.D., GaAs FET Principles and Technology (Artech House, Dedham), 1984, p. 145.

Wilson, R.G., IEEE Trans. Electron Dev. Lett., EDL-3 (1982), 2 10.

Gill, S.S. & Sealy, B.J., J. Electrochem, Soc, 133 (1986),.2590.

Grange, J.D., Bartle, D.C., Brown, B.R., Dineen. C., Knight, K.S., Medland, J.D., Wickenden, D.K. & Dowsett, M.G., Vacuum, 34 (19841, 199.

Canfield, P. & Forbes, L., IEEE Trans. Electron Dev., ED-33 (1986), 925.

Bamtt, NJ, Bade, D.C., Todd, A.G. & Grange, J.D., In MRS Symposium Proceedings, Vol. 35, 1985, p. 451.

Onuma, T. & Sugawa, T., Inst. Phys. Con$ Ser. No. 63 (1981), 413.

Ion ~niplantation in GaAs, Annual Research &port No. CD 6502349, (Plessey Research Caswelf Ltd., Caswell, UK), 1986.

Blunt, RT., Annual Research Report, (Plessey Research Caswell Ltd., Caswell, UK), 1985, pp. 91-95.

Patel, KK. & Sealy, B.J., Appl. Phys. Lett., 48 (1986), 1467.

Davies, D.E. & McNally, P.J., Appl. Phys. Lett., 44 (1954), 304.

McNally, P.J., IEEE Electron Dev. Lett., EDL-5 (1984), 126.

Liu, S.G., Narayan, S.Y., Magee, C.W. & Wu, C.P., Appl. Phys. Lett., 41 (1982), 72.

Onuma, T., Hirao, R. & Sugawa, T., J. Electrochem. Soc., 129 (1982), 837.

Cheung, S.K., Kwok, S.P., Kaleta, A., Yu, KM., Jaklevic, J.M., Liang, C.L., Cheung, N.W. & Haller, E.E., J. Vac. Sci. & Tech., 6 (1988), 1779.

Singh, B.R., Kochhar, M., Daga, O.P. & Khokle, W.S., Microelectron. Reliab., 23 (1983), 857.

Thomas, R.N., McGuigan, S., Eldridge, G.W. & Barrett, D.L., Proc. IEEE, 76 (1988), 778.

Koschek, G., Lakner, H. & Kubalek, E., Phys. Stat. Sol. (a), 108 (1958), 683.

Kukimoto, H. & Miyazawa, S., (Eds.), Semi-Insulating 111-V Materials (Ohmisha Ltd., Japan) 1986.

Miyazawa, S., Honda, T., Ishii, Y. & Ishida, S., Appl. Phys. Lett., 44 (1984), 410.

Rode, A.G. & Roper, J.G., Solid State Technology, 28 (1985), 209.

Kobayashi, T,, KoW, H.,Nahnishi, H., Hyuga, F. & Hoshibwa, K, Semi-Iasutating III-V Materials, H. Kukimoto, & S. Miyazawa, (Eds.), (Ohmisha Ltd, Japan) 1986,17-22.

Anholt, R., Balasingam, P., Chou, S.Y., Sigmon, T.W. & Deal, M., J. Appl.. Phys., 64 (1988), 3429.

Golio, J.M. & Trew, R.J., IEEE Trans. Microwllve Theo. Tech., M'IT-31 (1953), 1066.

DeSantis, P., IEEE Trans. Microwave Theo. Tech., MTT-28 (195O), 638.

Chen, T.H. & Shur, M.S., IEEE Trans. Electron Dev., ED-32 (1985), 18.

Dutt, M.B., Nath, R., Kumar, R. & Sharma, B.L. IEEE Trans. Electron Dev., ED-36 (1989), 765.

Biersack, J.P. & Haggmark, L.G., Nucl. Instrum. Methods, 174 (198O), 257.

Cristel, L.A., Gibbons, J.P. & Mylroie, S., J. Appl. Phys., 51 (1980), 6176.

Blight, S.R. & Thomas, H., GECJ. Research, 6 (1988), 25.

Yamasaki, K., Kato, N. & Hirayama, M., IEEE Trans. Electron Dev., ED-32 (1985), 2420.

Tan, ILL., Chung, H. & Chen, C.H., IEEE Electron Dev. Lett., EDL-8 (1987), 440.

Umemoto, Y., Masuda, N. & Kitsusada, K, IEEE Electron Dev. Lett., EDL-7 (1986), 396.

Gwilliam, R., Shahid, M.N. & Sealy, B.J., Paper presented at the MRS Symposium, Boston (USA), 1985.

Esfandiari, R., Feng, M. & Kanber, H., ZEEE Electron Dev. Lett., EDL-4 (1953), 29.

D'Avanzo, D. ZEEE Trans. Electron Dev.. ED-29 (1982), 105 1.

Paulson, N.M., Birritella, M.S., Miers, T.H. & McLaughin, K.L., Technical Digest 52, GaAs IC Symposium, New Orleans, USA (1982), 166.

~lauwaertF, ., Van Daele, P., Baets, R. & Lagasse, P., J. Electrochem, Soc., 134 (1987), 711.

Rao, E.V.K., Duhamel, N., Favennec, R.N. & L'Haridon, H., J. Appl. Phys., 49 (1975), 3898.

Blunt, R.T., Studies of Electrical and Electronic Engineering, Vol. 23, P. Balk & O.G. Folberth .(Eds.), (Elsevier, New York), 1985, 133.

Eden, R.C., Livingston, A.R. & Welch, B.M., ZEEE Spectrum, 20 (1953), 20.

Van Zeghbroeck, B.J., Patrick, W., Meier, H. & Vettiger, P., ZEEE Electron Dev. Lett., EDL-8 (1 957), 1 18.

Anholt, R. & Sigmon, T.W., ZEEE Trans. Electron Dev., ED-36 (1989), 250.