Effect of Different Chemical Environment on Porous Silicon

  • Amita Gupta Solid State Physics Laboratory, Delhi
  • Alok Jain Solid State Physics Laboratory, Delhi
  • V. K. Jain Solid State Physics Laboratory, Delhi
DOI: https://doi.org/10.14429/dsj.50.3354
Keywords: Porous silicon, Chemical vapours

Abstract

Properties of porous silicon (PS) are found to be sensitive towards different chemical environment. Because of its large surface area, it is highly reactive and can adsorb chemical vapours. The present study shows that photoconductivity and photoluminescence (PL) properties are changed significantly in the presence ofacetone, ammonia and steam vapours and can be used to identify and sense these chemical environment. These results also suggest that the molecules adsorbed on the pores change the transport mechanism of carriers in PS, leading to increase or decrease in conductivity. On the other hand, surface states on the enormous PS surface are modified under different chemical environment, leading to change in visible PL.

Author Biographies

Amita Gupta, Solid State Physics Laboratory, Delhi
Dr Amita Gupta obtained her MSc (Solid -State Physics) from University of Roorkee in 1975 and PhD (Physics) from Birla Institute of Technology and Science (BITS), Pilani, in 1.980. She joined DRDO at tht' Solidstate Physics Laboratory (SPL), Delhi, in 1982. Presently, she is working as Scientist E. She has published more than 30 papers in national/international journals. She is a life member of Semiconductor Society of India and Material Research Society of India. She has done extensive work on characterisation of solar cells and photodetectors. Her most significant contribution is towards observation of electroluminescence from PS which has been internationally recognised. Her current interests include: silicon-based microsensors for microelectromechanical
systems (MEMs), PS and semiconductor fuse.
Alok Jain, Solid State Physics Laboratory, Delhi
Dr Alok Jain obtained his MSc (Physics) from University of Delhi in 1985 and PhD from Indian Institute of Technology (1IT), New Delhi, in 1999. He joined DRDO at SPL, Delhi, in 1987. Presently, he is working on the structural, optical and electical properties of PS. His areas of interest include: chatacterisation of III- V epitaxial structures for the development of optoelectronic devices. He is also a life memher of Semiconductor Society of India.
V. K. Jain, Solid State Physics Laboratory, Delhi
Solidstate Physics Laboratory, Delhi

References

Gupta, Amita; Jain, V .K.; Jalwania, C.R.; Arora, O.P.; Puri, P.P.; Singh, R.; Pal, M. & Kumar, Vikram. Technologies of porolls silicon devices. Semiconductor Sci. Technol., 1995,10,698.

Mares, J.J.; Kristofik, J.; Pangrac, J. & Hospodkova. On the transport mechanism in porous silicon. Appl. Pys. Lett., I 993,63, I 80.

Canham, L.T.; Leong; Beale, M.I.J.; Cox, T.I. & Tayler, L. Efficient visible electroluminescence from highly porous silicon under cathodic bias. Appl. Phys. Lett., 1992,61, 2563.

Hakunaiyu, A.; Oules, C.; Bomchill, G.; Bsiesy, A.; Gaspard, F.; Herino, R.; Ligcen & Muller, F. Electroluminescence in the visible range during anodic oxidation of porous silicon

films. Appl. Phys. Lett., 1991,59,304.

Yablonovitch, E. & Gmitter, T. Auger recombination in silicon at low carrier densities. Appl. Phys. Lett., 1986,49, 587.

Canham, L.; Houlton, M.R.; LeOng, W 0 Yo; Pickering, Co & Keen, J.M. Atmospheric impregnation of porous silicon at room tempratureo J. Appl. Phys., 1991,70,422.

Prokes, S.M. Light emission in thermallyoxidised porous silicon; evidence for oxide related luminescence. Appl. Phys. Lett., 1993,62, 3244.

Anderson, R.C.; Muller, P.S. & Charles, Tobias Chemical surface modification of porous silicon J. Electrochem. Soc.,1993, 140,1393.

Graf, D.; Grundner, M. & Schulz, R. Reaction of water with HF acid-treated silicon ( 1 1 1) and (100) surfaces. I. Vac. Sci. Technol., 1989, A7, 808.

Gupta, Amita & lain, V.K. Luminescence from porous silicon. Del Sci. J., 1998,48(1),61.

Koch, F.; Petriva-Kock, V.; Muschik, T.; NikoJov, A. & Gavrilenko, V. Some perspective on the luminescence mechanism via surface confined status of porous silicon. MRS Symp. Proceedings., 1993,238,197.

Published
2013-01-01
How to Cite
Gupta, A., Jain, A., & Jain, V. (2013). Effect of Different Chemical Environment on Porous Silicon. Defence Science Journal, 50(1), 87-94. https://doi.org/10.14429/dsj.50.3354
Issue
Vol 50 No 1
Section
Electronics & Communication Systems
Copyright (c) 2016 Defence Science Journal

 Where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India