Luminescence from Porous Silicon

A. Gupta; V. K. Jain

doi:10.14429/dsj.48.3868

A. Gupta Solid State Physics Laboratory, Delhi
V. K. Jain Solid State Physics Laboratory, Delhi

DOI: https://doi.org/10.14429/dsj.48.3868

Keywords: Fabrication process, Light emission, Porous silicon, Electroluminescence, Photoluminescene

Abstract

Recent observations of photoluminescene (PL) and electroluminescence (EL) from poroussilicon (PS) have prompted many theoretical and experimental studies. Bulk crystalline Si is anindirect band gap material in which .recombination is dominated by non-radiative processes.Therefore, it cannot be used as light-emitting component in Si circuits. PS is a new material formed byanodisation ofsingle crystal Si wafers in hydro fluoric (liF) solution. Luminescence from this materialis being explored for technological applications all over the world. The mechanism of luminescence isstill not well-understood. Several models have been proposed but still the facts about the strong lightemission at room temperature are unknown. This paper presents a review of the fabrication process andstudies on luminescent properties of PS. A hybrid model based on quantum confinement of carriers inthe nanometer size Si crystallites having a large number of surface states is suggested to explain theobserved properties.

Author Biographies

A. Gupta, Solid State Physics Laboratory, Delhi

Dr (Mrs) A Gupta obtained her MSc (Solid State Physics) from University of Roorkee in 1975 and PhD (Physics) from Birla Institute of Technology and Science (BITS), Pilani, in 1980. She hasworked as Assistant Lecturer at BITS, Pilani and as Research Associate at lIT, Delhi, before joiningDRDO at the Solidstate Physics Laboratory (SPL), Delh4 in 1982, where she is currently workingas Scientist E. Her areas of research include solar cells, porous silicon, nanostructures, Si sensors,microelectromechanical systems (MEMSs), quadrant photodetector, IMPATT diodes and semiconductor fuse. She has published more than 30 research papers. She is a life member of both Semiconductor Society of India and Materials Research Society of India.

V. K. Jain, Solid State Physics Laboratory, Delhi

Solidstate Physics Laboratory, Delhi

References

Canham, L. T .Silicon quantum. wire array fabrication by electrochemical and chemical

dissolution of wafers. Appl. Phys. Lett. , 1990, 57, 1046-48.

Richter, A.; Steiner, P.; Kozlewski, F. & Lang, W. Current induced light emission in porous

silicon device. Electron Device Lett., 1991, 12, 691-92.

Koshida, N. & Koyama, H. Visible electroluminescence from porous silicon. Appl. Phys.

Lett., 1992,60,347-49.

Jain, V.K.; Gupta, A:; Adarsh Kumar, Singhal, G.K. & Vikram Kumar. Intense light emission in

diffused porous silicon junction. Pure Appl. Opt., 1994,3,225-29.

Gupta, A.; lain, V .K.; lalwania, C.R.; Singhal, G.K.; Arora, O.P .; Puri, P .P .; Sirigh, R.; Pal, M. &

Vikram Kumar .Technologies for porous silicon devices. Semicond. Sci. Tech, 1995,10,698-702.

Namavar, R.; Maruska, H.P. & Kalkhoran, N.M. Visible electroluminescence from porous silicon

n-p hetro-junction diodes. Appl. Phys. Lett., 1992, 60,2514-16.

Chen, z. & Bosman, G. Visible light emission from heavily doped porous silicon homo junction.

Appl. Phys. Lett., 1993,62: 708-09.

Steiner, P.; Kozlowski, F. & Lang, W. Light -emitting porous silicon diode with an increased

electroluminescence quantwn efficiency. Appl. Phys. Lett., 1993, 62, 2700-02.

Lee, M.K. & Peng, K.R. Blue emission of porous silicon. Appl. Phys. Lett., 1993,62,3159-60.

Canham, L,T. A glowing future for silicon. New Scientist, lOth April, 1993,23, 23-27.

Prokes, S.M. & Glembocki, O.J. Mater. Chem. Phys., 1993,35,1.

Searson, P.C.; Mokaulay, J.M. & Prokes, S.M. The formation morphology and optical properties

of porous silicon structures. .I: Electrochem Soc. , 1992,139,3373.

Wolford, D.J.; Reimer, A. & Scott, B.A. Efficient visible photolminescence in the binary Q-Si:Hx

alloy system. Appl. Phys. Lett., 1983,42,369.

Abeles, B. & Tiedje, T. Amorphous Semiconductor superlattices. Phy. Rev. Lett., 1983, 51, 2003-06.

Brandt, M.S.; Fuchs, H.D.; Stutzman, M.; Weber, J. & Cardona, M. Solid State Comm., 1992, 81,

Petrova-Koch, V.; Muschik, T.; Kux, A. Meyer, B.K.; Koch, F. & Lehmann, v. Rapid-thermaloxidized

porous Si-the superior photoluminescent Si. Appl. Phys. Lett., 1992,61,943.

Tischler, M.A. & Collins, R.T. Solid Stat Commu., 1992,84,819.

Read, A.J.; Needs, R.J.; Canham, L.T.; Calcott, p .D.J. & Qteish, A. First principle calculations of

the electronic properties of silicon quantum wires. Phys. Rev. Lett., 1992,69,1232-35.

Wilshaw, P.R. & Baswell, E.C. Field emission from pyramidal cathodes covered in porous

silicon..1: Vac. Sci. Technol., 1994,812,662-65.

Mimura, H.; Futagi, T .; Matsumoto, T .; Nakamura, T. & Kanemitsu, Y. Blue light

emission from rapid thermal oxidized porous silicon. Jpn. .1: Appl. Phys. , 1994, 33, 586-89.

Laiho, R.; Pavlov, A. & Hovi, O. Time dependence and optical quenching of photoluminescence.

Appl. Phys. Lett. , 1993, 63, 275-77.

Zhao, X.; Schoenfeld, 0.; Kusano, J.; Aoyagi, Y. & Sugano, T. Violet and blue light emjssions

from nanocrystalline thin films. Jpn. .I: Appl. Phys., 1994,33, L649-51.

Oneprovskii, V .S.; Karanvaskii, V .A.; Klinaovand, V.I. & Mastov, A.P. Quantum size effect and pronounced optical nonliniarities in porous silicon. JETP Lett., 1993,57,406-09.

Kovalev, 0.1. & Yaroshetzkii, 1.0. Fast and slow visible luminescence bands of oxidized porous

silicon. Appl. Phys. Lett., 1994,64,214-16.

Xie, Y .H.; Wilson, W .L.; Ross, F .M.; Mucha, J.A.; Fitzgerald, E.A.; Macualay, J:M. & Harris,

T .D. Luminescencce and structural study of porous silicon films. .I: Appl. Phys., 1992, 71, 2403.

Luminescence from Porous Silicon

Abstract

Author Biographies

References

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