Proposed Model for Degradation of Gunn Diodes as Observed from Study of the I-V Characteristics

Authors

  • R. Gulati Solid State Physics Laboratory, Delhi
  • I. Chandra Solid State Physics Laboratory, Delhi
  • B. L. Sharma Solid State Physics Laboratory, Delhi

DOI:

https://doi.org/10.14429/dsj.33.6159

Keywords:

Degradation, Gunn Diodes

Abstract

The effect of heat treatment on the functional Gunn diodes has been investigated in the temperature range of 200-300°C. The influence of electricfield during heat treatment has also been studied. The simple variations in I-V characteristics with annealing time have been utilized to interpret the contact behaviour.

Author Biographies

R. Gulati, Solid State Physics Laboratory, Delhi

Solid State Physics Laboratory, Delhi-110 007

I. Chandra, Solid State Physics Laboratory, Delhi

Solid State Physics Laboratory, Delhi-110 007

B. L. Sharma, Solid State Physics Laboratory, Delhi

Solid State Physics Laboratory, Delhi-110 007

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Published

2014-02-10

How to Cite

Gulati, R., Chandra, I., & Sharma, B. L. (2014). Proposed Model for Degradation of Gunn Diodes as Observed from Study of the I-V Characteristics. Defence Science Journal, 33(2), 113–117. https://doi.org/10.14429/dsj.33.6159

Issue

Vol. 33 No. 2

Section

General Papers

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