Design and Fabrication of 35 GHz GaAs Gunn Diodes .

Abstract

The paper describes design and fabrication of GaAs 100 mW Gunn diodes for operation at ~35 GHz. As the devices have low efficiency, a large ammount of input power is dessipated as heat, resulting in temperature rise in the device during operation beyond tolerable limits. Heat from these devices can be removed quickly and efficiently by using gold as integral heat sink (IHS). Further, the temperature of the device can be controlled by monitoring device area. Calculations for heat flow and expected efficiency have been done. Required Gunn structure has been grown by molecular beam epitaxy technique. The devices have been fabricated by IHS-IBR integral bonding ribbon technique. From the devices developed, 100 mW of output has been achieved in the frequency range 33-38 GHz with an efficiency of 3-4 percent.