Growth of Silicon- Germanium Alloy Layers

  • C. K. Maiti Indian Institute of Technology Kharagpur, Kharagpur
  • L. K. Bera Indian Institute of Technology Kharagpur, Kharagpur
  • S. Maikap Indian Institute of Technology Kharagpur, Kharagpur
  • S. K. Ray Indian Institute of Technology Kharagpur, Kharagpur
  • N. B. Chakrabarti Indian Institute of Technology Kharagpur, Kharagpur
  • R. Kesavan Solid State Physics Laboratory, Delhi
  • V. Kumar Solid State Physics Laboratory, Delhi
Keywords: Heteroepitaxy techniques, Binary alloys, Gas source molecular beam epitaxy, Heteroepitaxial film deposition, SiGe buffer layers, Hydrogenated amorphous SiGe


Heteroepitaxy techniques for the growth of group IV binary alloys, in particular, SiGe, SiC, GeC and SiSn films are reviewed. Deposition of heteroepitaxial films using various reactors like molecular beam epitaxy, gas source molecular beam epitaxy, and different chemical vapour deposition techniques are compared. Issues related to heteroepitaxial film deposition, such as critical layer thickness are examined. Growth of strained silicon on relaxed SiGe buffer layers, poly-SiGe film and hydrogenated amorphous SiGe (a-SiGe:H) film is also reviewed

Author Biographies

C. K. Maiti, Indian Institute of Technology Kharagpur, Kharagpur
Indian Institute of Technology, Kharagpur
L. K. Bera, Indian Institute of Technology Kharagpur, Kharagpur
Indian Institute of Technology Kharagpur, Kharagpur
S. Maikap, Indian Institute of Technology Kharagpur, Kharagpur
Indian Institute of Technology Kharagpur, Kharagpur
S. K. Ray, Indian Institute of Technology Kharagpur, Kharagpur
Indian Institute of Technology Kharagpur, Kharagpur
N. B. Chakrabarti, Indian Institute of Technology Kharagpur, Kharagpur
Indian Institute of Technology, Kharagpur
R. Kesavan, Solid State Physics Laboratory, Delhi

Solid State Physics Laboratory, Delhi

V. Kumar, Solid State Physics Laboratory, Delhi

Solid State Physics Laboratory, Dehli


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How to Cite
Maiti, C., Bera, L., Maikap, S., Ray, S., Chakrabarti, N., Kesavan, R., & Kumar, V. (2013). Growth of Silicon- Germanium Alloy Layers. Defence Science Journal, 50(3), 299-315.
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