Technology CAD of SiGe heterojunction field effect transistors (Short Communication)

Authors

  • S. Maikap Indian Institute of Technology Kharagpur, Kharagpur
  • B. Senapati Indian Institute of Technology Kharagpur, Kharagpur
  • C. K. Maiti Indian Institute of Technology Kharagpur, Kharagpur

DOI:

https://doi.org/10.14429/dsj.51.2230

Keywords:

Electronics, Semiconductors, Field Effect Transistors

Abstract

"A 2-D virtual wafer fabrication simulation suite has been employed for the technology CAD of SiGe channel heterojunction field effect transistors (HFETs). Complete fabrication process of SiGe p-HFETs has been simulated. The SiGe material parameters and mobility model were incorporated to simulate Si/SiGe p-HFETs with a uniform germanium channel having an Lejf of 0.5 ~m. A significant improvement in linear transconductance is observed when compared to control-silicon p-MOSFETs.

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Published

2002-01-01

How to Cite

Maikap, S., Senapati, B., & Maiti, C. K. (2002). Technology CAD of SiGe heterojunction field effect transistors (Short Communication). Defence Science Journal, 51(2), 195–199. https://doi.org/10.14429/dsj.51.2230

Issue

Vol. 51 No. 2

Section

Electronics & Communication Systems

License

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