Technology CAD of SiGe heterojunction field effect transistors (Short Communication)
Keywords: Electronics, Semiconductors, Field Effect Transistors
Abstract"A 2-D virtual wafer fabrication simulation suite has been employed for the technology CAD of SiGe channel heterojunction field effect transistors (HFETs). Complete fabrication process of SiGe p-HFETs has been simulated. The SiGe material parameters and mobility model were incorporated to simulate Si/SiGe p-HFETs with a uniform germanium channel having an Lejf of 0.5 ~m. A significant improvement in linear transconductance is observed when compared to control-silicon p-MOSFETs.
How to Cite
Maikap, S., Senapati, B., & Maiti, C. (2002). Technology CAD of SiGe heterojunction field effect transistors (Short Communication). Defence Science Journal, 51(2), 195-199. https://doi.org/10.14429/dsj.51.2230
Electronics & Communication Systems
Copyright (c) 2016 Defence Science Journal
where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India