Microstructural and Compositional Characterisation of Electronic Materials

  • D.V. Sridhara Rao Defence Metallurgical Research Laboratory, Hyderabad
  • R. Sankarasubramanian Defence Metallurgical Research Laboratory, Hyderabad
  • Deepak Kumar Defence Metallurgical Research Laboratory, Hyderabad
  • V. Singh Defence Metallurgical Research Laboratory, Hyderabad
  • K. Mahadeva Bhat
  • P. Mishra
  • S. Vinayak
  • T. Srinivasan
  • R. Tyagi
  • K. Muraleedharan
  • R. Muralidharan
  • D. Banerjee
Keywords: Electronic materials, semiconductor electronic device, nanowires, infrared device structure

Abstract

 

 Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN, and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanometer and sub-nanometer scale imaging capability of structure and chemistry have been widely used to characterise various aspects of electronic and optoelectronic device structures such as InGaAs quantum dots, InGaAs pseudomorphic (pHEMT), and metamorphic (mHEMT) layers and the ohmic metallisation of GaAs and GaN high electron mobility transistors, nichrome thin film resistors, GaN heteroepitaxy on sapphire and silicon substrates, as well as InAs and GaN nanowires. They also established convergent beam electron diffraction techniques for determination of lattice distortions in III-V compound semiconductors, EBSD for crystalline misorientation studies of GaN epilayers and high-angle annular dark field techniques coupled with digital image analysis for the mapping of composition and strain in the nanometric layered structures. Also, in-situ SEM experiments were performed on ohmic metallisation of pHEMT device structures. The established electron microscopy expertise for electronic materials with demonstrated examples is presented.

Published
2016-06-28
How to Cite
RaoD., SankarasubramanianR., KumarD., SinghV., BhatK., MishraP., VinayakS., SrinivasanT., TyagiR., MuraleedharanK., MuralidharanR., & BanerjeeD. (2016). Microstructural and Compositional Characterisation of Electronic Materials. Defence Science Journal, 66(4), 341-352. https://doi.org/10.14429/dsj.66.10207

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