Selected Application of Electron Beams in Solid State Materials and Devies Technology

  • S. C. Jain Solid State Physics Laboratory, Delhi
Keywords: Solid phase epitaxial, Crystal layers, Electron beam, Semiconductor layers


Experimental work on electron beam annealing of implanted or diffused semiconductor layers is reviewed. In the pulsed beam annealing technique, the top layer of the semiconductor melts and regrows epitaxially. All dopant atoms are frozen in electrically active state during this process. The point defects and clusters caused by radiation damage are completely annealed out. The bulk of the material remains unaffected as its temperature does not rise by more than a few degrees. In the CW electron beam annealing, the layer does not melt but due to sharp temperature gradient and high temperature of the layer, the growth of solid phase epitaxial layer is induced. However, a part of the dopant atoms may remain electrically inactive in this process of annealing. The pulsed beam annealing has also been used for growing high quality single crystal layers of germanium on silicon substrate. Recently, a new technology has been developed to grow silicon single crystal layers on amorphous substrates. Recent advances in the method of determination of lifetime using electron beams are also discussed.

Author Biography

S. C. Jain, Solid State Physics Laboratory, Delhi
Solid State Physics Laboratory, Delhi-110 007
How to Cite
Jain, S. (2014). Selected Application of Electron Beams in Solid State Materials and Devies Technology. Defence Science Journal, 30(2), 95-104.
Review Papers