MBE-Grown Lead Tin Telluride Infrared Devices

T. Srinivasan; J. Sobhanadri

doi:10.14429/dsj.39.4748

T. Srinivasan Indian Institute of Technology, Madras-400 036
J. Sobhanadri Indian Institute of Technology, Madras-400 036

DOI: https://doi.org/10.14429/dsj.39.4748

Keywords: Molecular Beam Epitaxy, Fabricated band pass filters

Abstract

An attempt was made to examine the performance of the Pb0.82sn0.18Te films grown by Molecular Beam Epitaxy (MBE)technique as infrared (IR) band pass filter and photoconductive IR detector. Films of required thickness for these purposes were precalculated and were grown by controlling the growth time. The fabricated band-pass filters were with Full Width at Half Maximum(FWHM) of 20-25 per ent centred at 6.5, 8 and 10 microns. The measured detectivity of the film was of the order of 10 power 8 cm H Z (1/2)W(-1) for 500 K black body temperature with 800 Hz chopping frequencyand 10 per cent electrical bandwidth at 77 K. All these films weregrown on freshly cleaved KC1 (100) substrates.

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