MBE-Grown Lead Tin Telluride Infrared Devices
AbstractAn attempt was made to examine the performance of the Pb0.82sn0.18Te films grown by Molecular Beam Epitaxy (MBE)technique as infrared (IR) band pass filter and photoconductive IR detector. Films of required thickness for these purposes were precalculated and were grown by controlling the growth time. The fabricated band-pass filters were with Full Width at Half Maximum(FWHM) of 20-25 per ent centred at 6.5, 8 and 10 microns. The measured detectivity of the film was of the order of 10 power 8 cm H Z (1/2)W(-1) for 500 K black body temperature with 800 Hz chopping frequencyand 10 per cent electrical bandwidth at 77 K. All these films weregrown on freshly cleaved KC1 (100) substrates.
Einspruch, N.G.. VLSI Electronics and Micro Structure Science, Vol 5 (Academic Press, New York), 1982, p. 229.
Srinivasan, T., Thesis (IIT, Madras), 1988.
Srinivasan, T.. Vaya, P.R. & Sobhanadri, J., Thin Solid Films, 161 (1988):428.
Srinivasan, T., Vaya, P.R. & Sobhanadri, J., 7th Int. Conf. Thin Films (New Delhi, India), 1987. MBE-Grown Lead Tin Telluride Infrared Devices
Srinivasan, T., Vaya, P.R. & Sobhanadri, J., 4th Int. Conf. Solid Films and Surfases, (Hamamastsu, Japan), 1987.
Srinivasan, T. & Sobhanadri, J . , Semicon. Sci. Technol., 3 (1988), 494.
Long, D., Topics in Applied Physics, 19 (1980), 101.
Kruse, P.W., Mc Gauchin, L.D. & Mc Quistan, R.B., Elements of Infrared
Technology, (Wiley, New York), 1962
where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India