Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques

  • Sunil Kumar DRDO Solid State Physics Laboratory New Delhi 110054
  • Amit Malik DRDO Solid State Physics Laboratory New Delhi 110054
  • Dipendra Singh Rawal DRDO Solid State Physics Laboratory New Delhi 110054
  • Seema Vinayak DRDO Solid State Physics Laboratory New Delhi 110054
  • Hitendra Malik Indian Institute of Technology New Delhi 110016
Keywords: GaN, Passivation, SiN, Plasma enhanced chemical vapour deposition, PECVD, Inductively coupled plasma chemical vapor deposition, ICPCVD

Abstract

In the present paper SiN thin film has been studied as a passivation layer and its effect on AlGaN/GaN HEMTs is investigated using two different deposition techniques i.e PECVD and ICPCVD. AlGaN/GaN HEMTs devices passivated with optimised SiN film have delivered lower gate leakage current (from μA to nA). Device source drain saturation current (Ids) increased from 400mA/mm to ~550 A/mm and the peak extrinsic trans-conductance increased from 100 mS/mm to 170 mS/mm for a 0.8 μm HEMT device. The optimised SiN passivation process has resulted in reduced current collapse and increased breakdown voltage for HEMT devices. 

Author Biographies

Sunil Kumar, DRDO Solid State Physics Laboratory New Delhi 110054

Mr Sunil Kumar received his MSc (Physics) from Meerut University, Meerut and MTech (Solid State Technology) from IIT Kharagpur, Kharagpur, India, in 2003. Presently working as Scientist E at DRDO-Solid State Physics Laboratory, Delhi. His area of research include: Development of GaN HEMT based MMIC process technology. 

Amit Malik, DRDO Solid State Physics Laboratory New Delhi 110054

Mr Amit Malik received his MSc (Physics) from Maharshi Dayanand University, Rohtak, India, in 2007. Presently working as a Scientist D at DRDO-Solid State Physics Laboratory, Delhi. His current research interests include: Fabrication of AlGaN/GaN MMICs, modelling and simulation of HEMT devices. 

Dipendra Singh Rawal, DRDO Solid State Physics Laboratory New Delhi 110054

Dr D.S. Rawal received his MSc (Physics) and MTech (ECE) from University of Roorkee, Roorkee, in 1988 and 1990, respectively. He obtained his PhD in Experimental Plasma Physics from IIT Delhi, Delhi, in 2012. Presently working as a Scientist ‘G’ and heading GaN device fabrication team at DRDO-Solid State Physics Laboratory, Delhi. He has published more than 55 research paper in various international journals and conferences. His area of research includes: Development of GaN HEMT based MMIC Technology for microwave power applications. 

Seema Vinayak, DRDO Solid State Physics Laboratory New Delhi 110054

Dr Seema Vinayak received her MTech (Solid State Materials) and PhD (Physics) from IIT Delhi, Delhi, India in 1991 and 2007, respectively. Presently working as a Scientist ‘G’ and heading the GaN MMIC Division at DRDO-Solid State Physics Laboratory, Delhi. She has published more than 50 research paper in international journals and conferences. Her area of research include: Development of GaN HEMT based MMIC technology for microwave applications. 

Hitendra Malik, Indian Institute of Technology New Delhi 110016

Dr Hitendra K. Malik received his MSc (Physics) from Institute of Advanced Studies, Meerut, in 1990 and PhD in Plasma Physics from the Indian Institute of Technology (IIT) Delhi in 1995. Presently working as Professor in the Department of Physics at IIT Delhi, He has been awarded a prestigious JSPS Postdoctoral Fellowship in 1996 and 2000. He has number of International and national publications in his name.

Published
2018-10-31
How to Cite
Kumar, S., Malik, A., Rawal, D., Vinayak, S., & Malik, H. (2018). Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques. Defence Science Journal, 68(6), 572-576. https://doi.org/10.14429/dsj.68.12329
Section
Electronics & Communication Systems