Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage

Mr Amit; Dipendra Singh Rawal; Sunil Sharma; Sonalee Kapoor; Robert Liashram; Rupesh K. Chaubey; Seema Vinayak; Rajesh K. Sharma

doi:10.14429/dsj.68.12134

Mr Amit DRDO-Solid State Physics Laboratory, Delhi - 110 054
Dipendra Singh Rawal DRDO-Solid State Physics Laboratory, Delhi - 110 054
Sunil Sharma DRDO-Solid State Physics Laboratory, Delhi - 110 054
Sonalee Kapoor DRDO-Solid State Physics Laboratory, Delhi - 110 054
Robert Liashram DRDO-Solid State Physics Laboratory, Delhi - 110 054
Rupesh K. Chaubey DRDO-Solid State Physics Laboratory, Delhi - 110 054
Seema Vinayak DRDO-Solid State Physics Laboratory, Delhi - 110 054
Rajesh K. Sharma DRDO-Solid State Physics Laboratory, Delhi - 110 054

DOI: https://doi.org/10.14429/dsj.68.12134

Keywords: GaN, HEMT, Field plate, ATLAS, Breakdown voltage

Abstract

The design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. The designed field plate structures are fabricated on indigenous AlGaN/GaN HEMT devices. AlGaN/GaN HEMT devices with field plate structures exhibit about three times improvement in breakdown voltage of device and are in close agreement with the simulation results. Integration of field plates in device have resulted in higher VDS (drain to source voltage) operation and improvement in output power of AlGaN/GaN HEMT devices. Incorporation of field plates also decrease the reverse leakage current of HEMT devices.

Author Biographies

Mr Amit, DRDO-Solid State Physics Laboratory, Delhi - 110 054

Mr Amit received his MSc (Physics) from Maharshi Dayanand University, Rohtak, India, in 2007. Presently working as a Scientist at DRDO-Solid State Physics Laboratory, Delhi. His current research interests include : Fabrication of AlGaN/GaN MMICs, modelling and simulation of HEMT devices.

Dipendra Singh Rawal, DRDO-Solid State Physics Laboratory, Delhi - 110 054

Dr D.S. Rawal received his MSc (Physics) and MTech (ECE) from University of Roorkee, Roorkee, in 1988 and 1990, respectively. He obtained his PhD in Experimental Plasma Physics from IIT Delhi, Delhi, in 2012. Presently working as a Scientist ‘G’ and heading GaN device fabrication team at DRDO-Solid State Physics Laboratory, Delhi. He has published more than 55 research papers in various international journals and conferences. His area of research includes: Development of GaN HEMT based MMIC Technology for microwave power applications.

Sunil Sharma, DRDO-Solid State Physics Laboratory, Delhi - 110 054

Mr Sunil Sharma received his MSc (Physics) from Meerut University, Meerut and by MTech (Solid State Technology) from IIT Kharagpur, Kharagpur, India, in 2003. Presently working as a Scientist ‘D’ at DRDO-Solid State Physics Laboratory, Delhi. His area of research include: Development of GaN HEMT based MMIC process technology.

Sonalee Kapoor, DRDO-Solid State Physics Laboratory, Delhi - 110 054

Dr Sonalee Kapoor received her MSc (Physics) from St. Stephen’s College, Delhi University, in 2000 and PhD in Physics from IIT Delhi, Delhi, India, in 2004. Presently working as a Scientist ‘E’ at DRDO-Solid State Physics Laboratory, Delhi. She has published more than 20 research papers in various international journals and conferences. Her area of research include: Development of GaN HEMT based MMIC technology and mainly working towards development of reliable ohmic/schottky contacts on AlGaN/GaN for HEMT microwave applications.

Robert Liashram, DRDO-Solid State Physics Laboratory, Delhi - 110 054

Mr Robert Laishram received his MSc (Physics) from University of Madras, Chennai, in 2000. Presently working as a Scientist ‘E’ at DRDO-Solid State Physics Laboratory, Delhi. He has published more than 05 research papers in international journal and conferences. His area of research include: Development of GaN based HEMT process technology and device characterisation.

Rupesh K. Chaubey, DRDO-Solid State Physics Laboratory, Delhi - 110 054

Dr Rupesh Kumar Chaubey, received his MSc (Physics) and PhD from BHU, Varanasi, India in 2001 and 2017, respectively. Presently working as a Scientist ‘E’ at DRDO-Solid State Physics Laboratory, Delhi. His area of research include: Development of GaN based high power devices for microwave applications.

Seema Vinayak, DRDO-Solid State Physics Laboratory, Delhi - 110 054

Dr Seema Vinayak received her MTech (Solid State Materials) and PhD (Physics) from IIT Delhi, Delhi, India in 1991 and 2007, respectively. Presently working as a Scientist ‘G’ and heading the GaN MMIC Division at DRDO-Solid State Physics Laboratory, Delhi. She has published more than 50 research papers in international journals and conferences. Her area of research include: Development of GaN HEMT based MMIC technology for microwave applications.

Rajesh K. Sharma, DRDO-Solid State Physics Laboratory, Delhi - 110 054

Dr R.K. Sharma, obtained his MSc (Physics) and PhD from Department of Physics, BHU, Varanasi, India in 1978 and 1996, respectively. Presently working as a Distinguished Scientist and Director, DRDO-Solid State Physics Laboratory, Delhi. He has published more than 60 research papers in international journals. He is currently leading several R&D programs on development of strategic semiconductor materials and devices. His areas of interest include: Growth and characterisation of compound semiconductor crystals and epitaxial hetero-structures.