Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage
Keywords: GaN, HEMT, Field plate, ATLAS, Breakdown voltage
AbstractThe design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. The designed field plate structures are fabricated on indigenous AlGaN/GaN HEMT devices. AlGaN/GaN HEMT devices with field plate structures exhibit about three times improvement in breakdown voltage of device and are in close agreement with the simulation results. Integration of field plates in device have resulted in higher VDS (drain to source voltage) operation and improvement in output power of AlGaN/GaN HEMT devices. Incorporation of field plates also decrease the reverse leakage current of HEMT devices.
How to Cite
Amit, M., Rawal, D., Sharma, S., Kapoor, S., Liashram, R., Chaubey, R., Vinayak, S., & Sharma, R. (2018). Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage. Defence Science Journal, 68(3), 290-294. https://doi.org/10.14429/dsj.68.12134
Electronics & Communication Systems
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