Design of Triple Gate for Sub threshold Low Power applications
A novel design of triple gate MOSFET structure with metal gate and an underlap channel is proposed to minimise the short channel and corner effects. The gate metal used is titanium nitride as well as source and drain is diffused with titanium nitride so as to increase the drive capability of the device. To obtain subthreshold threshold voltage operation of the device, the gates are kept symmetric and the gate electrodes corner segments are rounded off to minimise leakage. The device shows significant improvement over conventional double gate FinFET and triple gate device without gate corner round off device in terms of Ion, Ioff ratio, DIBL, subthreshold slope, rise time, fall time.
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