Doping of Semi Conductors

Authors

  • V. V. Agashe Naval Dockyard, Bombay

DOI:

https://doi.org/10.14429/dsj.10.7668

Keywords:

Doping, Purification methods

Abstract

Most of the semi-conductors are formed by addition of foreign substances in an insulator. This is called 'Doping'. These doped semi-conductors today are widely used in many electrical devices. Some of them are rectifiers, transistors, thermistors, oxides cathodes and photo-sensitive elements. This paper reviews the fundamental concept of impurity in semi-conductors and recent work on doping of the latter. Purification methods are described in the case of group IV elements and semi-conducting intermetallic compounds. Results of different physical measurements have been discussed in order to understand the role of 'doping'.

Author Biography

V. V. Agashe, Naval Dockyard, Bombay

Naval Chemical & Metallurgical Laboratory, Naval Dockyard, Bombay

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Published

2014-05-28

How to Cite

Agashe, V. V. (2014). Doping of Semi Conductors. Defence Science Journal, 10(3), 274–284. https://doi.org/10.14429/dsj.10.7668

Issue

Section

Research Papers