A Note on Electron Mobilities of 3-5 Semiconductors

Authors

  • K.N. Saxena Holkar Science College, Indore
  • V.W. Wagh Government Science College, Gwalior

DOI:

https://doi.org/10.14429/dsj.27.6664

Keywords:

Intermetallic semiconductors, Atomic Spin orbit splittings, Empirical relation

Abstract

Atomic spin-orbit splittings of the bonded atoms have been used to calculate electron mobilities of the intermetallic semiconductors. The proposed empirical relation for gallium and indium compounds give results in good agreement with experimental values.

Downloads

Published

2014-04-01

How to Cite

Saxena, K., & Wagh, V. (2014). A Note on Electron Mobilities of 3-5 Semiconductors. Defence Science Journal, 27(2), 89–90. https://doi.org/10.14429/dsj.27.6664

Issue

Vol. 27 No. 2

Section

Short Communication

License

 Where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India