A Note on Electron Mobilities of 3-5 Semiconductors

K.N. Saxena; V.W. Wagh

doi:10.14429/dsj.27.6664

A Note on Electron Mobilities of 3-5 Semiconductors

K.N. Saxena Holkar Science College, Indore
V.W. Wagh Government Science College, Gwalior

DOI: https://doi.org/10.14429/dsj.27.6664

Keywords: Intermetallic semiconductors, Atomic Spin orbit splittings, Empirical relation

Abstract

Atomic spin-orbit splittings of the bonded atoms have been used to calculate electron mobilities of the intermetallic semiconductors. The proposed empirical relation for gallium and indium compounds give results in good agreement with experimental values.

Published

2014-04-01

How to Cite

Saxena, K., & Wagh, V. (2014). A Note on Electron Mobilities of 3-5 Semiconductors. Defence Science Journal, 27(2), 89-90. https://doi.org/10.14429/dsj.27.6664

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Issue

Vol 27 No 2

Section

Short Communication

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