Anodic Oxidation of Silicon

  • B. S. Murthy Solid State Physics Laboratory, Delhi
  • K. R. Wadhera Solid State Physics Laboratory, Delhi
  • P.R.S. Rao Solid State Physics Laboratory, Delhi
DOI: https://doi.org/10.14429/dsj.21.6239
Keywords: Layers, Thermal Oxidation, Silicon Dioxide

Abstract

The set up used to grow silicon dioxide anodically on silicon surface has been described and the results obtained are discussed. Such layers have been used in obtaining information about diffused layers, getting planar structures and reducing the thickness of slices by known amounts. The method has certain advantages over techniques like thermal oxidation, sputtering etc. which are dealt in the paper.
Published
2014-04-01
How to Cite
Murthy, B., Wadhera, K., & Rao, P. (2014). Anodic Oxidation of Silicon. Defence Science Journal, 21(2), 131-140. https://doi.org/10.14429/dsj.21.6239
Issue
Vol 21 No 2
Section
General Papers
Copyright (c) 2016 Defence Science Journal

  where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India