Anodic Oxidation of Silicon

Authors

  • B. S. Murthy Solid State Physics Laboratory, Delhi
  • K. R. Wadhera Solid State Physics Laboratory, Delhi
  • P.R.S. Rao Solid State Physics Laboratory, Delhi

DOI:

https://doi.org/10.14429/dsj.21.6239

Keywords:

Layers, Thermal Oxidation, Silicon Dioxide

Abstract

The set up used to grow silicon dioxide anodically on silicon surface has been described and the results obtained are discussed. Such layers have been used in obtaining information about diffused layers, getting planar structures and reducing the thickness of slices by known amounts. The method has certain advantages over techniques like thermal oxidation, sputtering etc. which are dealt in the paper.

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Published

2014-04-01

How to Cite

Murthy, B. S., Wadhera, K. R., & Rao, P. (2014). Anodic Oxidation of Silicon. Defence Science Journal, 21(2), 131–140. https://doi.org/10.14429/dsj.21.6239

Issue

Vol. 21 No. 2

Section

General Papers

License

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