Status of Cooled and Uncooled Infrared Detectors at SCD, Israel

Philip Klipstein; Udi Mizrahi; Avraham Rami Fraenkel; Itay Shtrichman

doi:10.14429/dsj.63.5755

Philip Klipstein Semi Conductor Devices, Haifa 31021, Israel
Udi Mizrahi Semi Conductor Devices, Haifa 31021, Israel
Avraham Rami Fraenkel Semi Conductor Devices, Haifa 31021, Israel
Itay Shtrichman Semi Conductor Devices, Haifa 31021, Israel

DOI: https://doi.org/10.14429/dsj.63.5755

Keywords: Infrared, photon detector, focal plane array, micro-bolometer

Abstract

For the highest end mid-wave-infrared (MWIR) applications, SCD offers a family of cryogenically cooled detectors with background limited performance (BLIP). The matured InSb planar technology is implemented in a variety of focal plane arrays, from a 320 x 256 format with a 30 µm pitch to a 1280 x 1024 format with a 15 µm pitch, all of which are operated at 77K. A major challenge is to reduce the cooling requirements. Then substantial reductions in size, weight, and power (SWaP) can be achieved by using a smaller cooler and Dewar assembly. SCD’s new epi-InSb detectors, grown by molecular beam epitaxy (MBE), have a BLIP temperature of ~100 K at F/3. This enhanced operating temperature reduces the required cooling power by ~20 % compared with the conventional 77 K operation. For a very high operating temperature, we have developed the new XBn-InAsSb detector with a 4.2 µm cut-off wavelength. This detector exhibits a BLIP temperature of ~160K at F/3 and a reduction in cooling power of ~60 %. These HOT detectors enable an improved range of solutions, including faster cool-down time and mission readiness, longer mission times, and higher cooler reliability. We can also exploit their reduced dark current to obtain an enhanced signal to noise ratio at lower operating temperatures. The well-established 25 µm pitch family of uncooled µ-Bolometer detector has two basic formats, 384 x 288 and 640 x 480, and several sensitivity grades. The very high sensitivity 25 µm pitch detector has been demonstrated at F/2.4 for mid-range systems. The wide-band detector is optimized for both the long-wave-infrared and mid-wave-infrared spectral bands. Recently we developed the new 17 µm pitch family of detectors. The 640x480 format is a leading candidate for applications such as thermal weapon sights, driver vision enhancers and other mid-range IR systems. The 17 µm family is currently being expanded with the high sensitivity grade and with the addition of two new formats: the compact 384 x 288 for low SWaP applications, and the large 1024 x 768 format for applications requiring high resolution and a wide field of view.

Defence Science Journal, 2013, 63(6), pp.555-570, DOI:http://dx.doi.org/10.14429/dsj.63.5755

Author Biographies

Philip Klipstein, Semi Conductor Devices, Haifa 31021, Israel

Dr Philip Klipstein received his BA and PhD in Physics from Oxford University and Cambridge University, respectively. Research included transport and optics in GaAs/AlAs and Si/Ge. In 1990, he returned to Oxford University, adding research into antimonide heterostructures. He joined Semiconductor Devices (SCD) in 2000. He has published more than 120 research papers.

Udi Mizrahi, Semi Conductor Devices, Haifa 31021, Israel

Dr Udi Mizrahi received his MSc and PhD in Physics, from the Technion, Israel Institute of Technology, in 1999 and 2004, respectively. During his PhD he conducted research on ‘Time Resoled Correlation Spectroscopy of Single Photons from Semiconductor Quantum Dots’. He joined Semiconductor Devices (SCD) in 2004.

Avraham Rami Fraenkel, Semi Conductor Devices, Haifa 31021, Israel

Dr Avraham Rami Fraenkel received his MSc and DSc in Electrical Engineering from the Technion, Israel Institute of Technology, in 1986 and 1993, respectively. Presently working at Semiconductor Devices (SCD). Earlier he worked as project manager for CyOptics, specializing in 40 GHz optical communication components.

Itay Shtrichman, Semi Conductor Devices, Haifa 31021, Israel

Dr Itay Shtrichman, received his MSc and PhD in physics from the Technion, Israel Institute of Technology, in 1995 and 1999, respectively. His research was focused on the dynamics of carriers in semiconductor quantum structures. He spent two years as a post-doctoral researcher at the University of California, Santa Barbara. He joined SCD in 2003. He has published more than 30 refereed and conference papers.