Dependence of Physical Parameters of Compound Semiconductors on Refractive Index

Authors

  • R.R. Reddy Sri Krishnadevaraya University, Anantapur
  • Y. Nazeer Aharnmed Sri Krishnadevaraya University, Anantapur
  • P. Abdul Azeem Sri Krishnadevaraya University, Anantapur
  • K. Rama Gopal Sri Krishnadevaraya University, Anantapur
  • B. Sasikala Devi Sri Krishnadevaraya University, Anantapur
  • T.V.R. Rao Sri Krishnadevaraya University, Anantapur

DOI:

https://doi.org/10.14429/dsj.53.2272

Keywords:

Refractive index, plasmon energy, electronic polarisability, bond length, microhardness, bulk modulus, force constants, and lattice energy

Abstract

Interesting relationships have been found between refractive index, plasmon energy, electronic polarisability, bond length, microhardness, bulk modulus, force constants and lattice energy. An attempt has been made for the first time to correlate only one physical parameter with others. The calculated values are in good agreement with the experimental values as well as with the values reported in the literature. Refractive index data is the only one parameter required to estimate all the above parameters.

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Published

2003-07-01

How to Cite

Reddy, R., Aharnmed, Y. N., Azeem, P. A., Gopal, K. R., Devi, B. S., & Rao, T. (2003). Dependence of Physical Parameters of Compound Semiconductors on Refractive Index. Defence Science Journal, 53(3), 239–248. https://doi.org/10.14429/dsj.53.2272

Issue

Section

Applied Physics & Fluid Dynamics