Mercury cadmium telluride : A superior choice for near room temperature infrared detectors (Review Paper)

  • R. Ashokan University of Zllinois at Chicago, Chicago, IL - 60 607
  • S. Sivananthan University of Zllinois at Chicago, Chicago, IL - 60 607
  • S. Velicu Smart Pixel Znc., Bolingbrook, ZL - 60 440
Keywords: Infrared detectors, mercury cadmium telluride, heterostmctures, read-out circuits, molecular beam epitaxy

Abstract

"The advantages of mercury cadmium telluride (HgCdTe) for hot IR detector applications are discussed. Molecular beam epitaxy (MBE) is used to grow advanced device structures for this purpose. MBE offers the potential to grow HgCdTe heterostructure layers on large [7.62 cm (3 in.) or more] silicon substrates leading to very large format and high performance IR focal plane arrays in the future. Preliminary material and device properties achieved in p+-v-n+ device structures grown on 7.62 cm (3 in.) (211 )-oriented silicon wafers are discussed.
Published
2002-01-01
How to Cite
Ashokan, R., Sivananthan, S., & Velicu, S. (2002). Mercury cadmium telluride : A superior choice for near room temperature infrared detectors (Review Paper). Defence Science Journal, 51(1), 67-73. https://doi.org/10.14429/dsj.51.2206