Effect of Collector Voltage on the Large and Small Signal Modulation Characteristics of 980 nm Transistor Laser

R. Ramya; S. Piramasubramanian; G. Ganesh Madhan; D. Rebecca

doi:10.14429/dsj.70.16341

R. Ramya Madras Institute of Technology, Anna University, Chennai - 600 044 https://orcid.org/0000-0001-8903-8539
S. Piramasubramanian Madras Institute of Technology, Anna University, Chennai - 600 044 https://orcid.org/0000-0002-3645-6697
G. Ganesh Madhan Madras Institute of Technology, Anna University, Chennai - 600 044 http://orcid.org/0000-0002-4883-2186
D. Rebecca Madras Institute of Technology, Anna University, Chennai - 600 044 https://orcid.org/0000-0002-3370-486X

DOI: https://doi.org/10.14429/dsj.70.16341

Keywords: Transistor laser, F-K (Franz-Keldysh) effect, Modulation response, Large signal analysis, Small signal analysis

Abstract

Theoretical analysis of Transistor Laser is carried out and the static and frequency responses for different collector voltages, under common emitter configuration are determined. The threshold current (Ith) is observed as 33mA and it increases linearly with reverse collector to base voltage (VCB). Meanwhile, the output optical power is found to decrease proportionately when VCB is increased. A maximum of 18.7GHz modulation bandwidth is observed when an input base current of 95 mA is applied at a fixed value of VCB (1V). The modulation bandwidth is found to decrease with increase in reverse VCB. The turn on delay increases with collector voltage. However, it decreases with increase in base current.

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