Ion Beam Based Techniques for Mercury Cadmium Telluride Infrared Detectors

  • R. Pal Solid State Physics Laboratory, Delhi
  • Vandna Mittal Solid State Physics Laboratory, Delhi
  • R. K. Sharma Solid State Physics Laboratory, Delhi
  • P. K. Basu Solid State Physics Laboratory, Delhi
Keywords: Infrared detectors, mercury-cadmium-telluride detectors, ion implantation, ion beam milling, detector fabrications, IR detectors, reactive ion itching, etching processes

Abstract

The paper reviews the applications of ion beam-based techniques such as ion implantation and ion beam milling, for HgCdTe detector fabrication. Fabrication of large-format arrays and two-color arrays necessitate the use of dry processes. Ion irradiation causes type conversion in HgCdTe. The type conversion is far beyond the damage sites because of Hg in-diffusion to interstitial sites. The dry processes combine high anisotropy, faster etch rates, and better dimensional control, than wet etch processes, but require the damaged region to be removed.

Defence Science Journal, 2009, 59(4), pp.395-400, DOI:http://dx.doi.org/10.14429/dsj.59.1539

Author Biographies

R. Pal, Solid State Physics Laboratory, Delhi
Solid State Physics Laboratory, Delhi-110 054
Vandna Mittal, Solid State Physics Laboratory, Delhi
Solid State Physics Laboratory, Delhi-110 054
R. K. Sharma, Solid State Physics Laboratory, Delhi
Solid State Physics Laboratory, Delhi-110 054
P. K. Basu, Solid State Physics Laboratory, Delhi
Solid State Physics Laboratory, Delhi-110 054
Published
2009-07-01
How to Cite
Pal, R., Mittal, V., Sharma, R., & Basu, P. (2009). Ion Beam Based Techniques for Mercury Cadmium Telluride Infrared Detectors. Defence Science Journal, 59(4), 395-400. https://doi.org/10.14429/dsj.59.1539
Section
Special Issue Papers