Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer (Review Paper)

Authors

  • T. Som Institute of Phsyics, Bhubaneswar
  • O. P. Sinha AMITY Institute of Nanotechnology, Noida
  • J. Ghatak Institute of Phsyics, Bhubaneswar
  • B. Satpati Institute for Minerals and Materials Technology, Bhubaneswar
  • D. Kanjilal Inter-University Accelerator Centre, New Delhi

DOI:

https://doi.org/10.14429/dsj.59.1533

Keywords:

Ion beam-induced recrystallisation, silicon nitride, high-resolution transmission electron microscopy, selected area diffraction pattern, swift ion beam, SHI, swift heavy ion

Abstract

Studies on MeV heavy ion beam-induced epitaxial crystallisation of a buried silicon nitride layer are reported. Transmission electron micrographs and selected area diffraction patterns have been used to study the recrystallisation of an ion beam-synthesised layer. Complete recrystallisation of the silicon nitride layer having good quality interfaces with the top- and the substrate-Si has been obsorved. Recrystallisation is achieved at significantly lower temperatures of 100 and 200OC for oxygen and silver ions, respectively. The fact that recrystallisation is achieved at the lowest temperature for the oxygen ions is discussed on the basis of energy loss processes.

Defence Science Journal, 2009, 59(4), pp.351-355, DOI:http://dx.doi.org/10.14429/dsj.59.1533

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Published

2009-07-01

How to Cite

Som, T., Sinha, O. P., Ghatak, J., Satpati, B., & Kanjilal, D. (2009). Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer (Review Paper). Defence Science Journal, 59(4), 351–355. https://doi.org/10.14429/dsj.59.1533

Issue

Vol. 59 No. 4: Ion Beam Technology

Section

Special Issue Papers

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