Series Resistance of Silicon Millimeter Wave (Ka-band) IMPATT Diodes

Authors

  • Tapas Kumar Pal Research Centre Imarat, Hyderabad–500 069

DOI:

https://doi.org/10.14429/dsj.59.1508

Keywords:

Conductance, IMPATT diode, series resistance, small signal, susceptance

Abstract

The paper describe a computer-based method to calculate the series resistance Rs of a millimeter wave Ka-band packaged IMPATT diode from small signal conductance-susceptance characteristics. The series resistance Rs has been calculated at the threshold condition when the small signal conductance of the packaged diode just becomes negative and the device susceptance becomes positive. Again, the value of series resistance Rs has been determined from the measurement of threshold current and threshold frequency with the silicon Ka-band IMPATT diode embedded in a resonant cap cavity which agrees well with the values obtained by the computer method.
Defence Science Journal, 2009, 59(2), pp.189-193, DOI:http://dx.doi.org/10.14429/dsj.59.1508

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Published

2009-03-01

How to Cite

Pal, T. K. (2009). Series Resistance of Silicon Millimeter Wave (Ka-band) IMPATT Diodes. Defence Science Journal, 59(2), 189–193. https://doi.org/10.14429/dsj.59.1508

Issue

Vol. 59 No. 2

Section

Research Papers

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