Long Wave Infrared Type II Superlattice Focal Plane Array Detector

  • P.C. Klipstein SemiConductor Devices, P.O. Box 2250, Haifa
  • E. Avnon SemiConductor Devices, P.O. Box 2250, Haifa
  • Y. Benny SemiConductor Devices, P.O. Box 2250, Haifa
  • A. Fraenkel SemiConductor Devices, P.O. Box 2250, Haifa
  • A. Glozman SemiConductor Devices, P.O. Box 2250, Haifa
  • E. Hojman SemiConductor Devices, P.O. Box 2250, Haifa
  • E. Ilan SemiConductor Devices, P.O. Box 2250, Haifa
  • E. Kahanov SemiConductor Devices, P.O. Box 2250, Haifa
  • O. Klin SemiConductor Devices, P.O. Box 2250, Haifa
  • L. Krasovitski SemiConductor Devices, P.O. Box 2250, Haifa
  • L. Langof SemiConductor Devices, P.O. Box 2250, Haifa
  • I. Lukomsky SemiConductor Devices, P.O. Box 2250, Haifa
  • M. Nitzani SemiConductor Devices, P.O. Box 2250, Haifa
  • L. Shkedy SemiConductor Devices, P.O. Box 2250, Haifa
  • I. Shtrichman SemiConductor Devices, P.O. Box 2250, Haifa
  • N. Snapi SemiConductor Devices, P.O. Box 2250, Haifa
  • R. Talmor SemiConductor Devices, P.O. Box 2250, Haifa
  • A. Tuito SemiConductor Devices, P.O. Box 2250, Haifa
  • S. Vaserman SemiConductor Devices, P.O. Box 2250, Haifa
  • E. Weiss SemiConductor Devices, P.O. Box 2250, Haifa
Keywords: Long Wave Infrared, LWIR, Superlattice, Type II superlattices, Focal plane array

Abstract

The XBn/XBp family of barrier detectors enables diffusion limited dark currents comparable with HgxCd1-xTe Rule-07 and high quantum efficiencies. SCD’s XBp type II superlattice (T2SL) detector contains InAs/GaSb and InAs/AlSb T2SLs, and was designed for the long wave infrared (LWIR) atmospheric window using k · p based modeling of the energy bands and photo-response. Wafers are grown by molecular beam epitaxy and are fabricated into focal plane array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridisation, under-fill, and back-side polishing. The 640 × 512 pixel, 15 μm pitch, detector goes by the name of ‘Pelican-D LW’ and exhibits a quantum efficiency of ~ 50 per cent with background limited performance at an operating temperature of 77 K. It has a cut-off wave length of ~ 9.5 μm, with a pixel operability of above 99 per cent. The detector gives a very stable image with a residual non uniformity of below 0.04 per cent over its useful dynamic range. A new digital read-out integrated circuit has been designed so that the complete detector closely follows the configuration of SCD’s MWIR Pelican-D detector.

Author Biography

P.C. Klipstein, SemiConductor Devices, P.O. Box 2250, Haifa
Dr Philip Klipstein, received his BA and PhD in Physics from Oxford and Cambridge Universities respectively. After two years as a Junior Research Fellow at Cambridge, he moved to a tenured post at Imperial College, London. Research included transport and optics in GaAs/AlAs and Si/Ge. In 1990, he returned to Oxford, adding research into antimonide heterostructures, and was promoted to Reader in 2000. He joined Semiconductor Devices (SCD) in 2001. He is currently a Senior Scientist and Leading Researcher in the Antimonide Based Compound Semiconductor program (ABCS).
Published
2017-03-14
How to Cite
Klipstein, P., Avnon, E., Benny, Y., Fraenkel, A., Glozman, A., Hojman, E., Ilan, E., Kahanov, E., Klin, O., Krasovitski, L., Langof, L., Lukomsky, I., Nitzani, M., Shkedy, L., Shtrichman, I., Snapi, N., Talmor, R., Tuito, A., Vaserman, S., & Weiss, E. (2017). Long Wave Infrared Type II Superlattice Focal Plane Array Detector. Defence Science Journal, 67(2), 135-140. https://doi.org/10.14429/dsj.67.11182
Section
Special Issue Papers