Demonstration of Fabricated Midwave Infrared InAs/GaSb Type-II Superlattice-based Focal Plane Arrays

K.C. Goma Kumari; H.M. Rawool; S. Chakrabarti

doi:10.14429/dsj.67.11178

K.C. Goma Kumari Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai
H.M. Rawool Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai
S. Chakrabarti Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai

DOI: https://doi.org/10.14429/dsj.67.11178

Keywords: Fabrication, Midwave infrared, Type-II superlattice, Focal plane array, FPA

Abstract

In this study, fabricated 320 × 256 infrared focal plane arrays (FPAs) were realised using a GaSb/InAs-based type-II superlattice heterostructure for midwave infrared (MWIR) imaging. We report here the optimized fabrication and characterization of single-pixel infrared detectors and FPAs. MWIR spectral response up to 5 μm of these single-pixel detectors was evident up to 250 K. Responsivity was measured to be 1.62 A/W at 0.8 V and 80 K. Current–voltage characteristics at room temperature (300 K) and at low temperature (18 K) revealed the resistance and dark current variation of the device in the operating bias region. Moreover, good thermal images were obtained at device temperatures up to 150 K for low-temperature targets. Low noise equivalent difference in temperature was measured to be 58 mK at 50 K and 117 mK at 120 K.

Author Biographies

K.C. Goma Kumari, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai

Ms K.C. Goma Kumari received her MSc (Analytical Chemistry) from SNDT University, Mumbai, in 2011. She has since been assisting a research group in the Department of Electrical Engineering at Indian Institute of Technology (IIT) Bombay. She is involved in the fabrication and characterisation of III–V detectors.

H.M. Rawool, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai

Mr H.M. Rawool received his BE (Instrumentation) from University of Mumbai, India, in June 2012. After graduation, he joined a research group at IIT Bombay in July 2012, where he has been involved in fabricating and characterizing III–V group IR detectors.

S. Chakrabarti, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai

Dr S. Chakrabarti received his MSc and PhD from the Department of Electronic Science, University of Calcutta, Kolkata, India, in 1991 and 2000, respectively. Presently, he is a professor in the Department of Electrical Engineering, IIT Bombay, Mumbai, India. He has extensively researched molecular beam epitaxial growth, characterisation, and fabrication of compound (III–V) GaAs-based semiconductor optoelectronic materials and devices. In II–VI ZnO-based research, he has demonstrated stable p-doping through plasma immersion ion implantation as well as a homojunction ZnO-based UV-LED.