PAL, P.; KUMAR, S.; SINGH, S. K. Study of Eutectic Etching Process for Defects Analysis in n type 4H SiC. Defence Science Journal, [S. l.], v. 70, n. 5, p. 515–519, 2020. DOI: 10.14429/dsj.70.16361. Disponível em: https://publications.drdo.gov.in/ojs/index.php/dsj/article/view/16361. Acesso em: 14 jun. 2025.