CHANDER, S.; SINGH, P.; GUPTA, S.; RAWAL, D. S.; GUPTA, M. Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material. Defence Science Journal, [S. l.], v. 70, n. 5, p. 511–514, 2020. DOI: 10.14429/dsj.70.16360. Disponível em: https://publications.drdo.gov.in/ojs/index.php/dsj/article/view/16360. Acesso em: 7 jul. 2025.