TY - JOUR AU - H. Saha AU - C. Roy Chaudhuri PY - 2009/11/01 Y2 - 2024/03/29 TI - Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration (Review Papers) JF - Defence Science Journal JA - DSJ VL - 59 IS - 6 SE - Special Issue Papers DO - 10.14429/dsj.59.1560 UR - https://publications.drdo.gov.in/ojs/index.php/dsj/article/view/1560 AB - A review of the integration of the complementry metal oxide semiconductors (CMOS) circuit with the microelectromechanical systems (MEMS) structures for sensing and RF applications has been presented. Specifically, the integrated mechanical sensors, chemical gas sensors, and biochemical sensors have been discussed. Application of MEMS as switches, varactors, and inductors and their integration in RF circuits has also been highlighted. The fabrication and design challenges for the CMOS-MEMS integration have been described. A new design methodology for integration of thermal effects in an integrated pressure sensor has been proposed.Defence Science Journal, 2009, 59(6), pp.557-567, DOI:http://dx.doi.org/10.14429/dsj.59.1560 ER -