| || MBE Grown Lead Tin Telluride Infrared Devices
Author : Srinivasan, T. ;Sobhanadri, J.
Source : Defence Science Journal ; Vol:39(1) ; 1989 ; pp 43-51
Subject : 548.2 Crystal Growth;548 Crystallography
Keywords : Molecular Beam Epitaxy;Fabricated band pass filters
Abstract : An attempt was made to examine the performance of the Pb/sub 0.82/Sn/sub 0.18/Te films grown by Molecular Beam Epitaxy (MBE) technique as infrared (IR) band pass filter and photoconductive IR detector. Films of required thickness for these purposes were precalculated and were grown by controlling the growth time. The fabricated band-pass filters were with Full Width at Half Maximum (FWHM) of 20-25 per cent centered at 6.5, 8 and 10 microns. The measured detectivity of the film was of the order of 10/sup 8/ cm Hz/sup 1/2/ W/sup -1/ for 500 k black body temperature with 800 Hz chopping frequency and 10 per cent electrical bandwidth at 77 K. All these films were grown on freshly cleaved KCI (100) substrates.