| || Anodic Oxidation of Silicon
Author : Rao, P.R.S. ;Wadhera, K.R.;Murthy, B.S.
Source : Defence Science Journal ; Vol:21(2) ; 1971 ; pp 131-140
Subject : 54 Chemistry
Keywords : Layers ;Thermal Oxidation;Silicon Dioxide
Abstract : The set up used to grow silicon dioxide anodically on silicon surface has been described and the results obtained are discussed. Such layers have been used in obtaining information about diffused layers, getting planar structures and reducing the thickness of slices by known amounts. The method has certain advantages over techniques like thermal oxidation, sputtering etc. which are dealt in the paper.