 | Agashe, V.V. |
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 | Doping of semi conductors
Author : Agashe, V.V.
Source : Defence Science Journal ; Vol:10(3) ; 1960 ; pp 274-284
Subject : 621.315.592 Semiconductors ;621.3 Electrical Engineering
Keywords : Doping ;Purification methods
Abstract : Most of the semi-conductors are formed by addition of foreign substances in an insulator. This is called 'Doping'. These doped semi-conductors today are widely used in many electrical devices. Some of them are rectifiers, transistors, thermistors, oxides cathodes and photo-sensitive elements. This paper reviews the fundamental concept of impurity in semi-conductors and recent work on doping of the latter. Purification methods are described in the case of group IV elements and semi-conducting intermetallic compounds. Results of different physical measurements have been discussed in order to understand the role of 'doping'. |
| | Role of neutron beams in understanding the structure of alloys ferroelectrics and semi conductors
Author : Agashe, V.V.
Source : Defence Science Journal ; Vol:10(2) ; 1960 ; pp 124-140
Subject : 621.039 Nuclear Sciences
Keywords : Neutron beams ;Ferro-electricity ;Experimental technique of neutron diffraction
Abstract : Our knowledge of materials is advanced to great extent with the help of optical, X-ray and electron beams, yet certain problems like order/disorder in alloys of metals having neighbouring atomic numbers, magnetic moment of magnetic alloys and compounds, position of atoms/ions in ferroelectrics cannot be solved with these techniques alone. Fortunately neutron beams because of their interaction with nuclei, can give us a detailed information about these problems. This paper reviews the experimental technique of neutron diffraction. Certain problems in alloy constitution, ferro-electricity and magnetic moments are discussed in light of the information obtained from neutron diffraction studies. |
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