| || Toxicology of Gallium Arsenide: An Appraisal
Author : Flora, S.J.S. ;Gupta, Das
Source : Defence Science Journal ; Vol:44(1) ; 1994 ; pp 5-10
Subject : 57.089 Biomedical Sciences
Keywords : Electronic warfare;Semiconductor materials;Toxicology;Semiconductors;Hepatotoxic effects
Abstract : The toxicity of gallium arsenide (GaAs), a compound extensively used in Defence as a superior semiconductor material, in ground-and space-based radar and in electronic warfare is not well known. Results from recent reports on experimental animals indicate that GaAs produces profound effects on the lung, liver, immune and haematopoietic systems. GaAs is found to be soluble in aqueous solution and forms unidentified gallium and arsenic species upon dissolution. Different species of arsenic which are formed following the exposure may lead to various toxic effects. This paper gives a comprehensive account of work carried out in the toxicology of GaAs.
| || Technology CAD of SiGe heterojunction field effect transistors
Author : Maikap, S.;Senapati, B.;Maiti, C.K.
Source : Defence Science Journal ; Vol:51(2) ; 2001 ; pp 195-199
Subject : 681.2 Instrumentation
Keywords : Electronics;Semiconductors;Field Effect Transistors
Abstract : "A 2-D virtual wafer fabrication simulation suite has been employed for the technology CAD of SiGe channel heterojunction field effect transistors (HFETs). Complete fabrication process of SiGe p-HFETs has been simulated. The SiGe material parameters and mobility model were incorporated to simulate Si/SiGe p-HFETs with a uniform germanium channel having an Lejf of 0.5 ~m. A significant improvement in linear transconductance is observed when compared to control-silicon p-MOSFETs. "